• DocumentCode
    1100117
  • Title

    Thermionic-emission diffusion model of current conduction in polycrystalline silicon

  • Author

    Singh, S.N. ; Kishore, Ram ; Singh, P.K.

  • Author_Institution
    National Physical Laboratory, New Delhi, India
  • Volume
    32
  • Issue
    5
  • fYear
    1985
  • fDate
    5/1/1985 12:00:00 AM
  • Firstpage
    998
  • Lastpage
    1000
  • Abstract
    A comprehensive model of current conduction in polycrystalline silicon based on thermionic-emission diffusion theory is developed. On the basis of this model, a more general expression for the effective majority-carrier mobility is derived which reduces to thermionic-emission (TE) theory-based expressions under certain simplifying assumptions and also helps in understanding the physical significance of the scaling factor used by earlier workers to explain their experimental results.
  • Keywords
    Algorithms; Circuit simulation; Design automation; Gallium arsenide; Integrated circuit modeling; MESFET circuits; Parameter extraction; Parasitic capacitance; Silicon; Solid modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22061
  • Filename
    1484807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100117