• DocumentCode
    1100125
  • Title

    Flat-band voltage dependence on channel length in short-channel threshold model

  • Author

    Huang, J.S.T. ; Schrankler, W.

  • Author_Institution
    Honeywell, Inc., Minneapolis, MN
  • Volume
    32
  • Issue
    5
  • fYear
    1985
  • fDate
    5/1/1985 12:00:00 AM
  • Firstpage
    1001
  • Lastpage
    1002
  • Abstract
    This paper describes a modified short-channel threshold model that incorporates the flat-band voltage dependence on the channel length. Results obtained from the threshold voltage measurement on n-channel MOSFET´s before and after total dose radiation are in good agreement with the proposed model.
  • Keywords
    Channel bank filters; Equations; Geometry; Laboratories; Length measurement; MOS devices; Solid modeling; Solid state circuits; Threshold voltage; Voltage measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22062
  • Filename
    1484808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100125