Title :
Flat-band voltage dependence on channel length in short-channel threshold model
Author :
Huang, J.S.T. ; Schrankler, W.
Author_Institution :
Honeywell, Inc., Minneapolis, MN
fDate :
5/1/1985 12:00:00 AM
Abstract :
This paper describes a modified short-channel threshold model that incorporates the flat-band voltage dependence on the channel length. Results obtained from the threshold voltage measurement on n-channel MOSFET´s before and after total dose radiation are in good agreement with the proposed model.
Keywords :
Channel bank filters; Equations; Geometry; Laboratories; Length measurement; MOS devices; Solid modeling; Solid state circuits; Threshold voltage; Voltage measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22062
