• DocumentCode
    1100136
  • Title

    New III-V double-heterojunction laser emitting near 3.2 μm

  • Author

    Mani, H. ; Joullie, A. ; Boissier, G. ; Tournie, E. ; Pitard, F. ; Joullie, A.M. ; Alibert, C.

  • Author_Institution
    Univ. des Sci. et Tech. du Languedoc, Montpellier, France
  • Volume
    24
  • Issue
    25
  • fYear
    1988
  • fDate
    12/8/1988 12:00:00 AM
  • Firstpage
    1542
  • Lastpage
    1543
  • Abstract
    Double heterostructure lasers based on the InAsSbP/InAsSb system have been prepared by liquid phase epitaxy. They operate at 78 K near 3.2 μm, with a threshold current density of 4.5 kA/cm2 in pulsed conditions. The characteristic temperature T0 is 30 K
  • Keywords
    III-V semiconductors; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; 3.2 micron; 30 K; 78 K; III-V double-heterojunction laser; InAsSbP-InAsSb; characteristic temperature; liquid phase epitaxy; pulsed conditions; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    29203
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100136