Title :
New III-V double-heterojunction laser emitting near 3.2 μm
Author :
Mani, H. ; Joullie, A. ; Boissier, G. ; Tournie, E. ; Pitard, F. ; Joullie, A.M. ; Alibert, C.
Author_Institution :
Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fDate :
12/8/1988 12:00:00 AM
Abstract :
Double heterostructure lasers based on the InAsSbP/InAsSb system have been prepared by liquid phase epitaxy. They operate at 78 K near 3.2 μm, with a threshold current density of 4.5 kA/cm2 in pulsed conditions. The characteristic temperature T0 is 30 K
Keywords :
III-V semiconductors; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; 3.2 micron; 30 K; 78 K; III-V double-heterojunction laser; InAsSbP-InAsSb; characteristic temperature; liquid phase epitaxy; pulsed conditions; threshold current density;
Journal_Title :
Electronics Letters
