• DocumentCode
    1100212
  • Title

    The DSI diode—A fast large-area optoelectronic detector

  • Author

    Roth, Walter ; Schumacher, Hermann ; Kluge, Jurgen ; Geelen, H.J. ; Beneking, Heinz

  • Author_Institution
    EL-MOS, Dortmund, Germany
  • Volume
    32
  • Issue
    6
  • fYear
    1985
  • fDate
    6/1/1985 12:00:00 AM
  • Firstpage
    1034
  • Lastpage
    1036
  • Abstract
    Fast double-Schottky-interdigitated diodes have been fabricated by evaporating Al-Schottky contacts on lowly doped n-GaAs (n=1014cm-3), These detectors have a relatively large light-sensitive area of 400 µm2. Rise and fall times are in the order of 10 ps. The external quantum efficiency is 25 percent at λ = 820 nm. The frequency response of the diodes is essentially flat up to 18 GHz, which is the limit of the measuring equipment.
  • Keywords
    Conducting materials; Detectors; Fingers; Lithography; Optical pulses; Parasitic capacitance; Photoconducting devices; Schottky barriers; Schottky diodes; Semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22069
  • Filename
    1484815
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100212