• DocumentCode
    1100232
  • Title

    Experimental determination of electroabsorption in GaAs/Al0.32 Ga0.68As multiple quantum well structures as function of well width

  • Author

    Alavi, K. ; Engelmann, R.W.H.

  • Volume
    24
  • Issue
    25
  • fYear
    1988
  • fDate
    12/8/1988 12:00:00 AM
  • Firstpage
    1555
  • Lastpage
    1557
  • Abstract
    Electroabsorption in GaAs/Al0.32Ga0.68As multiple quantum well structures was experimentally studied for quantum well widths in the range 50-260 Å. The maximum obtainable change in absorption coefficient was found to increase monotonically with decreasing well width at the cost of increasing electric field
  • Keywords
    III-V semiconductors; aluminium compounds; electroabsorption; gallium arsenide; semiconductor quantum wells; 50 to 260 A; GaAs-Al0.32Ga0.68As; absorption coefficient; electric field; electroabsorption; multiple quantum well structures; well width;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    29212
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100232