• DocumentCode
    1100333
  • Title

    I/V anomaly and device performance of submicrometre-gate Ga0.47In0.53As/Al0.48In0.52 As HEMT

  • Author

    Kuang, Jente B. ; Tasker, P.J. ; Chen, Y.K. ; Eastman, L.F. ; Aina, O.A. ; Hier, H. ; Fathimulla, A.

  • Author_Institution
    Cornell Univ., Ithaca, NY
  • Volume
    24
  • Issue
    25
  • fYear
    1988
  • fDate
    12/8/1988 12:00:00 AM
  • Firstpage
    1571
  • Lastpage
    1572
  • Abstract
    Discrepancies observed between the DC and RF characteristics of the Ga0.47In0.53As/Al0.48In0.52 As HEMT are presented. Owing to the deep-level electron trapping, the DC I/V curve is distorted and the DC transconductance (gmDC) is severely compressed. The small-signal RF performance is not degraded by this low-frequency phenomenon. RF transconductance (gmRF) of 555 mS/mm and the current gain cut-off frequency (ft) of 102 GHz were obtained
  • Keywords
    III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 102 GHz; 555 mS; DC I/V curve; DC transconductance; EHF; Ga0.47In0.53As-Al0.48In0.52 As; HEMT; I/V anomaly; III-V semiconductors; RF characteristics; RF transconductance; SHF; current gain cut-off frequency; deep-level electron trapping; device performance of submicrometre-gate; low-frequency phenomenon; microwave devices; small-signal RF performance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    29222
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100333