• DocumentCode
    1100355
  • Title

    Noise characteristics of GaAs metal-semiconductor-metal photodiodes

  • Author

    Wada, O. ; Hamaguchi, Hiroki ; Le Beller, L.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi
  • Volume
    24
  • Issue
    25
  • fYear
    1988
  • fDate
    12/8/1988 12:00:00 AM
  • Firstpage
    1574
  • Lastpage
    1575
  • Abstract
    Noise spectral density was measured for GaAs metal-semiconductor-metal photodiodes. The noise spectral density is determined solely by the photocurrent shot noise at low bias voltage, but it exhibits a contribution of excess noise associated with the photocurrent gain at high bias voltage
  • Keywords
    III-V semiconductors; aluminium; electron device noise; gallium arsenide; metal-semiconductor-metal structures; photodiodes; random noise; Al-GaAs; III-V semiconductors; MSM type; excess noise; high bias voltage; metal-semiconductor-metal photodiodes; noise spectral density; photocurrent gain; photocurrent shot noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    29224
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100355