• DocumentCode
    1100385
  • Title

    Gallium arsenide Schottky power rectifiers

  • Author

    Baliga, Jayant B. ; Sears, A.R. ; Barnicle, M.M. ; Campbell, P.M. ; Garwacki, W. ; Walden, J.P.

  • Author_Institution
    General Electric Company, Schenectady, NY
  • Volume
    32
  • Issue
    6
  • fYear
    1985
  • fDate
    6/1/1985 12:00:00 AM
  • Firstpage
    1130
  • Lastpage
    1134
  • Abstract
    This paper discusses the development of high-performance gallium arsenide Schottky rectifiers for power switching applications. These diodes are shown to exhibit superior turn-on and turn-off dynamic switching characteristics when compared with silicon p-i-n rectifiers. The theoretical analysis presented in the paper indicates that the gallium arsenide Schottky power rectifier will be attractive for high-frequency power switching circuits operating at 1.00-300 V.
  • Keywords
    Epitaxial layers; Gallium arsenide; P-i-n diodes; PIN photodiodes; Power supplies; Rectifiers; Schottky diodes; Silicon; Switching circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22085
  • Filename
    1484831
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100385