• DocumentCode
    1100397
  • Title

    Development of advanced CMOS-compatible bipolar transistor for BiCMOS technology

  • Author

    Nouailhat, A. ; Giroult, G. ; Delpech, P. ; Gerodolle, A.

  • Author_Institution
    CNET, Meylan
  • Volume
    24
  • Issue
    25
  • fYear
    1988
  • fDate
    12/8/1988 12:00:00 AM
  • Firstpage
    1581
  • Lastpage
    1583
  • Abstract
    A fully CMOS-compatible single-level polycide bipolar technology is studied. Two dimensional (2D) process simulations of the device have been carried out and compared with SIMS measurements. Fabrication steps, process simulations and first electrical results are presented and discussed
  • Keywords
    BIMOS integrated circuits; integrated circuit technology; BiCMOS technology; SIMS measurements; advanced CMOS-compatible bipolar transistor; fabrication; process simulations; single-level polycide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    29229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100397