Title :
A formula for the concentration profile of a buried layer with back diffusion
Author_Institution :
VTC Inc., Bloomington, MN
fDate :
6/1/1985 12:00:00 AM
Abstract :
A simple formula allows an accurate dopant concentration profile to be calculated for a Gaussian buried layer with back diffusion into an epitaxial layer. The formula is valid when the drive-in diffusion is dominant, when the back diffusion is dominant, and for intermediate cases.
Keywords :
Computer errors; Epitaxial growth; Epitaxial layers; Equations; Etching; Gaussian distribution; Semiconductor process modeling; Substrates; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22088
