DocumentCode :
1100445
Title :
0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode 
MOSFET
Author :
Wu, Y.Q. ; Wang, W.K. ; Koybasi, O. ; Zakharov, D.N. ; Stach, E.A. ; Nakahara, S. ; Hwang, J. C M ; Ye, Peide D.
Author_Institution :
Birck Nanotech- nology Center, Purdue Univ., West Lafayette, IN
Volume :
30
Issue :
7
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
700
Lastpage :
702
Abstract :
We report the experimental demonstration of deep-submicrometer inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k Al2O3 as gate dielectric. In this letter, n-channel MOSFETs with 100-200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200-130-nm-long gates exhibit drain currents of 232-440 muA/mum and transconductances of 538-705 muS/mum. The 100-nm device has a drain current of 801 muA/mum and a transconductance of 940 muS/mum. However, the device cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium arsenide; high-k dielectric thin films; indium compounds; nanoelectronics; semiconductor doping; ALD high-k dielectric gate; Al2O3; In0.75Ga0.25As; MOSFET; atomic layer doping; deep-submicrometer inversion-mode; drain-induced barrier; gate dielectric fabrication; short-channel effect; size 100 nm to 200 nm; voltage 0.8 V; Aluminum oxide; CMOS technology; High K dielectric materials; High-K gate dielectrics; Indium gallium arsenide; MOSFET circuits; Molecular beam epitaxial growth; Semiconductor materials; Transconductance; Voltage; Atomic layer deposition; InGaAs; MOSFET; high-$k$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2022346
Filename :
5109812
Link To Document :
