• DocumentCode
    1100453
  • Title

    Ambient temperature HgCdTe photoconductor can achieve detectivity higher than 1×108 cm Hz1/2/W at 10.6 μm

  • Author

    Piotrowski, J. ; Jaksic, Zoran ; Djinovic, Z.

  • Volume
    24
  • Issue
    25
  • fYear
    1988
  • fDate
    12/8/1988 12:00:00 AM
  • Firstpage
    1590
  • Lastpage
    1591
  • Abstract
    The authors have calculated the performance of ambient temperature long wavelength HgCdTe photoconductors as a function of material composition and doping. It has been shown that the figures of merit, both calculated and measured, are several times higher than the ones reported previously. It is concluded that an optimised ambient temperature HgCdTe photoconductor can achieve detectivity higher than 1×107 cm Hz1/2/W at λ=10.6 μm
  • Keywords
    II-VI semiconductors; cadmium compounds; mercury compounds; photoconducting devices; photodetectors; semiconductor doping; 10.6 micron; HgCdTe photoconductors; II-VI semiconductors; detectivity; doping; figures of merit; long wavelength; material composition; optimised ambient temperature; photodetectors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    29234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100453