• DocumentCode
    1100481
  • Title

    Performance of Carbon monoxide-sensitive MOSFET´s with metal-Oxide semiconductor gates

  • Author

    Dobos, Karoly ; Zimmer, Gunter

  • Author_Institution
    University of Dortmund, Dortmund, Germany
  • Volume
    32
  • Issue
    7
  • fYear
    1985
  • fDate
    7/1/1985 12:00:00 AM
  • Firstpage
    1165
  • Lastpage
    1169
  • Abstract
    A multilayer PdO-Pd-gate metallization was investigated at a MOS-CO sensor. This type of metallization gives a high CO sensitivity and a good electrical control of the transistor. The performance of this sensor was investigated in comparison to a commercial SnO2resistor CO sensor.
  • Keywords
    Electrons; Gas detectors; Hydrogen; MOS devices; MOSFETs; Metal-insulator structures; Metallization; Semiconductivity; Semiconductor materials; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22094
  • Filename
    1484840
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100481