Preprocessor modeling of parameter and geometry dependences of short and narrow MOSFET´s for VLSI circuit simulation, optimization, and statistics with SPICE

A parameter measurement and modeling method is described for the SPICE-2 level-3 MOSFET. Geometry dependences are modeled outside the simulator with simple polynomials which are incorporated into a preprocessor for parameter generation and circuit file construction. Operating point dependences of threshold voltage, body effect, and channel width are incorporated into an enhanced device model inside the simulator. The method is of general application and can be applied to any circuit simulator containing any transistor model. Use of the preprocessor enables the transistor model in the simulator to be reduced to its simplest and computationally shortest form, eliminates the task of parameter listing for the circuit designer, and provides a means for automated circuit design, optimization, reliability studies, and yield statistics.