Electrical characterization of the boron-doped Si-SiO2interface

A study of the influence of doping, crystallographic orientation, and oxide thickness on the parameters of the boron-doped si-siO2interface is presented for oxides thermally grown in steam. The fundamental surface recombination velocity which is proportional to the product of the effective recombination center density and the associated capture cross section is nearly constant in the range of doping studied. The fixed oxide charge density increases with the doping concentration, which is probably due to the increasing importance of the segregated dopant atoms in the oxide and/or to the excess silicon interstitials related to the large dopant density.