• DocumentCode
    1100646
  • Title

    GaAs FET RF switches

  • Author

    Gopinath, Anand ; Rankin, Bruce J.

  • Author_Institution
    MIT Lincoln Laboratory, Lexington, MA
  • Volume
    32
  • Issue
    7
  • fYear
    1985
  • fDate
    7/1/1985 12:00:00 AM
  • Firstpage
    1272
  • Lastpage
    1278
  • Abstract
    The device parameter dependences of GaAs FET switch performance have been determined analytically and by two-dimension simulation. FET switch design would maximize the value of the switch quality factor while retaining the power handling capacity. Expressions for both the quality factor and power handling capacity are derived in terms of device parameters, and would enable such optimization to be performed.
  • Keywords
    Electrodes; Equivalent circuits; FETs; Gallium arsenide; Impedance; Performance analysis; Q factor; Radio frequency; Switches; Switching circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22111
  • Filename
    1484857
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100646