Two-dimensional dynamic numerical simulation of an SOI formation process in laser-induced seeded lateral growth

Dynamic computer simulation of seeded lateral growth has been carried out, taking into account laser-beam scanning and the melt/solidification process of the deposited poly-Si layer, to confirm the fundamental principles of seeded lateral growth. Crystal growth direction over the SiO2layer is found to change depending on the thickness of the layer with sufficient lateral growth occuring with a thicker SiO2layer. Although lateral crystal growth velocity depends strongly on laser irradiation conditions and sample structures, it was estimated to be about 50 cm/s When the scan speed was set at 100 cm/s with a specified sample structure. This indicates the possibility of matching between beam scanning speed and growth velocity in obtaining large-area SOI structures by optimizing these parameters.