Title :
Analysis of current leakage in InGaAsP/InP buried heterostructure lasers
Author :
Ohtoshi, Tsukuru ; Yamaguchi, Ken ; Chinone, Naoki
Author_Institution :
Hitachi, Ltd., Tokyo, Japan
fDate :
6/1/1989 12:00:00 AM
Abstract :
The mechanism of current leakage at high temperatures in InGaAsP/InP buried heterostructure (BH) lasers with p-n-p-n current-blocking structures is analyzed using two-dimensional computer simulation. It is found that no junction in the blocking layers is reverse-biased and that current confinement is due to electrically floating regions in the blocking structures. To minimize the leakage current in these BH lasers, it is necessary to decrease the device width and the connection length between the blocking and cladding layers and to increase the doping level and thickness of the blocking layers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; leakage currents; semiconductor junction lasers; InGaAsP-InP; buried heterostructure lasers; cladding layers; connection length; current confinement; current leakage; device width; doping level; electrically floating regions; leakage current; p-n-p-n current-blocking structures; two-dimensional computer simulation; Computer simulation; Doping; High speed optical techniques; Indium phosphide; Laser modes; Laser theory; Leakage current; Poisson equations; Radiative recombination; Semiconductor lasers; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
