DocumentCode
1100785
Title
GaInAsP/InP surface emitting injection laser with a ring electrode
Author
Uchiyama, Seiji ; Iga, Kenichi
Author_Institution
Tokyo Institute of Technology, Midoriku, Yokohama, Japan
Volume
20
Issue
10
fYear
1984
fDate
10/1/1984 12:00:00 AM
Firstpage
1117
Lastpage
1118
Abstract
-A GaInAsP/InP surface emitting injection laser ( 
m) with a ring electrode has been fabricated. In this structure we separated the reflecting mirror from the p-side electrode in order to increase the reflectivity. Threshold current was 90 mA at 77 K and the operating temperature has been raised up to -85°C. The cavity length was 7.5 μm and single longitudinal mode operation was achieved.
m) with a ring electrode has been fabricated. In this structure we separated the reflecting mirror from the p-side electrode in order to increase the reflectivity. Threshold current was 90 mA at 77 K and the operating temperature has been raised up to -85°C. The cavity length was 7.5 μm and single longitudinal mode operation was achieved.Keywords
Gallium materials/lasers; Chemical lasers; Electrodes; Electrons; Indium phosphide; Laser mode locking; Laser modes; Ring lasers; Semiconductor laser arrays; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1984.1072277
Filename
1072277
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