• DocumentCode
    1100798
  • Title

    Improvement of breakdown voltage of oxide on V-shaped grooves by thermal oxidation and etching

  • Author

    Sekigawa, T. ; Ishii, K. ; Oka, N. ; Hayashi, Y.

  • Author_Institution
    Electrotechnical Laboratory, Ibaraki, Japan
  • Volume
    32
  • Issue
    7
  • fYear
    1985
  • fDate
    7/1/1985 12:00:00 AM
  • Firstpage
    1359
  • Lastpage
    1360
  • Abstract
    In order to make the corners of V-shaped grooves rounded and improve the breakdown voltage of gate oxide there, a method of growing an oxide film on the V-shaped surface and etching it off before the gate oxide growth is proposed. Experiments and theory show its effectiveness.
  • Keywords
    Breakdown voltage; Diodes; Electron devices; Estimation theory; Etching; Oxidation; Power transistors; Shape; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22126
  • Filename
    1484872
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100798