DocumentCode
1100823
Title
Four-wave mixing in GaAs/AlGaAs semiconductor lasers
Author
Nietzke, Rainer ; Panknin, Peter ; Elsässer, Wolfgang ; Göbel, Ernst O.
Author_Institution
Fachbereich Phys., Philipps-Univ., Marburg, West Germany
Volume
25
Issue
6
fYear
1989
fDate
6/1/1989 12:00:00 AM
Firstpage
1399
Lastpage
1406
Abstract
Studies on high-efficiency four-wave mixing (FWM) in semiconductor lasers up to detuning frequencies of about 21 GHz are discussed. Population pulsations of the inverted carrier system due to nonlinear beat frequency inversion modulation are identified as the microscopic origin. A simple description of FWM in terms of frequency-modulation-induced sidebands is discussed
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; nonlinear optics; optical modulation; semiconductor junction lasers; 21 GHz; GaAs-AlGaAs; detuning frequencies; four-wave mixing; frequency-modulation-induced sidebands; inverted carrier system; nonlinear beat frequency inversion modulation; population pulsations; semiconductor lasers; third order susceptibility; Four-wave mixing; Frequency; Frequency modulation; Gallium arsenide; Laser modes; Microscopy; Nonlinear optics; Optical mixing; Optical modulation; Optical refraction; Pump lasers; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.29275
Filename
29275
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