Influence of the barriers on the temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers

Author

Blood, Peter ; Fletcher, E. Dennis ; Woodbridge, Karl ; Heasman, Keith C. ; Adams, Alfred R.

Author_Institution

Philips Res. Lab., Redhill, UK

Volume

25

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1459

Lastpage

1468

Abstract

Using window devices, light emission has been observed from the barrier regions of lasers with 25-A-wide quantum wells. From measurements of threshold current as a function of temperature on devices grown by molecular-beam epitaxy using different Al cells for the barriers, the strong influence of nonradiative barrier recombination processes on the threshold current has been demonstrated. Further measurements of threshold current as a function of hydrostatic pressure show that recombination from the L and X conduction-band minima makes an important contribution to the current. The calculations show how the temperature dependence of threshold depend on factors such as cavity length and the number of quantum wells

Keywords

III-V semiconductors; aluminium compounds; electric current measurement; gallium arsenide; laser variables measurement; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; GaAs-AlGaAs; III-V semiconductors; cavity length; hydrostatic pressure; molecular-beam epitaxy; nonradiative barrier recombination processes; quantum well lasers; threshold current; window devices; Blood; Current measurement; DH-HEMTs; Gallium arsenide; Molecular beam epitaxial growth; Pressure measurement; Quantum well lasers; Radiative recombination; Temperature dependence; Temperature sensors; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.29281

Filename

29281