Title :
Highly reliable InGaP/InGaAlP visible light emitting inner stripe lasers with 667 nm lasing wavelength
Author :
Okuda, Hajime ; Ishikawa, Masayuki ; Shiozawa, Hideo ; Watanabe, Yukio ; Itaya, Kazuhiko ; Nitta, Kouichi ; Hatakoshi, Gen-ichi ; Kokubun, Yoshihiro ; Uematsu, Yutaka
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
6/1/1989 12:00:00 AM
Abstract :
To obtain highly reliable InGaP/InGaAlP inner stripe (IS) lasers, the relation between the maximum CW operation temperature and other laser characteristics has been determined. The Al composition of the cladding layer, the carrier concentration of the p-cladding layer, and the thicknesses of the active layer and cladding layer have been optimized. It was found that an Al composition of 0.7 was the most suitable for the cladding layer, and the optimized carrier concentration was 4×1017 cm-3. A maximum temperature of 90°C was obtained for a 0.1-μm active layer thickness and a 0.6-μm cladding layer thickness. This is the highest value for InGaP/InGaAlP IS lasers. In the case of a 0.06-μm active layer thickness and a 0.8-μm cladding layer thickness, a maximum temperature of 75°C was obtained. IS lasers with facet coating have been operating stably for more than 8000 h at 40°C and 3 mW and for more than 4000 h at 50°C and 3 mW
Keywords :
III-V semiconductors; carrier density; gallium compounds; indium compounds; laser transitions; reliability; semiconductor junction lasers; 0.06 micron; 0.1 micron; 0.6 micron; 0.8 micron; 3 mW; 40 to 90 degC; Al composition; CW operation; InGaP-InGaAlP; active layer; carrier concentration; cladding layer; inner stripe lasers; laser characteristics; p-cladding layer; Artificial intelligence; Coatings; Diode lasers; Gallium arsenide; Laser stability; MOCVD; Optical beams; Optical materials; Semiconductor lasers; Stimulated emission; Temperature; Thermal resistance;
Journal_Title :
Quantum Electronics, IEEE Journal of
