Title :
Vertical smear noise model for MOS-type color imager
Author :
Ohba, Shinya ; Nakai, Masaaki ; Ando, Haruhisa ; Takahashi, Kenji ; Masuda, Michio ; Takemoto, Iwao ; Fujita, Tsutomu
Author_Institution :
Central Research Laboratory, Hitachi Ltd., Tokyo, Japan
fDate :
8/1/1985 12:00:00 AM
Abstract :
The smear noise in an MOS imager was analyzed based on the three types of generation mechanisms: capacitive coupling, carrier diffusion, and light leakage. The measured smear performance was explained by these analyses. The results lead to the conclusion that the main cause of smear in an MOS imager is due to the component of light leakage.
Keywords :
Capacitance; Charge coupled devices; Color; Colored noise; Consumer products; Diodes; Laboratories; Optical coupling; Photodiodes; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22137
