• DocumentCode
    1100956
  • Title

    Design of Fabry-Perot surface-emitting lasers with a periodic gain structure

  • Author

    Corzine, Scott W. ; Geels, Randall S. ; Scott, Jeff W. ; Yan, Ran-Hong ; Coldren, Larry A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    25
  • Issue
    6
  • fYear
    1989
  • fDate
    6/1/1989 12:00:00 AM
  • Firstpage
    1513
  • Lastpage
    1524
  • Abstract
    A detailed analysis of a Fabry-Perot surface emitting laser (FP-SEL) which utilizes the recently proposed concept of periodic gain is presented. It is shown that by using the periodic gain concept, close to a factor-of-two reduction in threshold current should be possible; the ideal reduction of a factor of two is only limited by the internal loss of the cavity. Multiple quantum-well active regions are also considered and shown to provide greater than a factor-of-two improvement over bulk GaAs periodic and uniform gain configurations. The effects of index perturbations within the cavity created by interleaving active and passive segments are treated for different Al mole fractions within the passive segments. The effects are found to be small for x<0.3. In addition, optical pumping results in periodic gain DBR-SEL samples which exhibit very low optical power-density thresholds (<3×104 W/cm2) and narrow above-threshold linewidths (<2 Å) are included
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser theory; optical pumping; semiconductor junction lasers; Fabry-Perot surface emitting laser; GaAs-AlGaAs; cavity; distributed-Bragg-reflector surface emitting laser; index perturbations; multiple quantum-well active regions; optical power-density thresholds; optical pumping; periodic gain; periodic gain structure; threshold current; Design optimization; Fabry-Perot; Gallium arsenide; Interleaved codes; Optical design; Optical pumping; Optical resonators; Periodic structures; Quantum well devices; Semiconductor laser arrays; Surface emitting lasers; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.29288
  • Filename
    29288