Title :
A frame-transfer CCD color imager with vertical antiblooming
Author :
Van de Steeg, Martien J H ; Peek, Herman L. ; Bakker, Jacques G C ; Pals, J. Albertus ; Dillen, B.G.M.H. ; Oppers, Jac M A M
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
fDate :
8/1/1985 12:00:00 AM
Abstract :
A high-density 604 (H)× 576 (V) frame-transfer CCD color image sensor is realized with a pixel dimension of 10.0 (H) × 15.6 (V) µm2, an image diagonal of 7.5 mm, and a total chip area of 66 mm2. On-chip color filters and the use of a triple read-out register result in separate Cy, G, and Ye output signals. The imager is an n-p-n buried-channel CCD which can handle 125 times overexposure with vertical antiblooming. For the calculation of a suitable dopant distribution in the image, storage, and output sections, a four-step procedure has been developed. This procedure has proved to be successful and is much faster than an approach based exclusively on two-dimensional potential calculations.
Keywords :
Absorption; Charge coupled devices; Charge-coupled image sensors; Color; Electrons; Filters; Image sensors; Image storage; Sensor phenomena and characterization; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22141