• DocumentCode
    1100982
  • Title

    35-GHz Bandwidth, 5-V-cm Drive Voltage, Bulk GaAs Substrate Removed Electrooptic Modulators

  • Author

    Shin, JaeHyuk ; Wu, Shaomin ; Dagli, Nadir

  • Author_Institution
    Univ. of California, Santa Barbara
  • Volume
    19
  • Issue
    18
  • fYear
    2007
  • Firstpage
    1362
  • Lastpage
    1364
  • Abstract
    Bulk GaAs-AlGaAs true push-pull electrooptic modulators with 5-V-cm Vpi and 35-GHz bandwidth were demonstrated using substrate removal techniques. The traveling wave electrodes showed almost no dispersion, making it ideal for broadband applications.
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical modulation; electrodes; gallium arsenide; GaAs - Surface; GaAs-AlGaAs - Interface; electrooptic modulators; frequency 35 GHz; semiconductor modulator; substrate removal technique; traveling wave electrodes; Bandwidth; Dielectric substrates; Electrodes; Electrooptic modulators; Gallium arsenide; High speed optical techniques; Optical modulation; Optical polymers; Optical waveguides; Voltage; Electrooptic modulator; optical modulator; semiconductor modulator; traveling wave electrode;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2007.902923
  • Filename
    4292170
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1100982