DocumentCode :
1100982
Title :
35-GHz Bandwidth, 5-V-cm Drive Voltage, Bulk GaAs Substrate Removed Electrooptic Modulators
Author :
Shin, JaeHyuk ; Wu, Shaomin ; Dagli, Nadir
Author_Institution :
Univ. of California, Santa Barbara
Volume :
19
Issue :
18
fYear :
2007
Firstpage :
1362
Lastpage :
1364
Abstract :
Bulk GaAs-AlGaAs true push-pull electrooptic modulators with 5-V-cm Vpi and 35-GHz bandwidth were demonstrated using substrate removal techniques. The traveling wave electrodes showed almost no dispersion, making it ideal for broadband applications.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electrodes; gallium arsenide; GaAs - Surface; GaAs-AlGaAs - Interface; electrooptic modulators; frequency 35 GHz; semiconductor modulator; substrate removal technique; traveling wave electrodes; Bandwidth; Dielectric substrates; Electrodes; Electrooptic modulators; Gallium arsenide; High speed optical techniques; Optical modulation; Optical polymers; Optical waveguides; Voltage; Electrooptic modulator; optical modulator; semiconductor modulator; traveling wave electrode;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2007.902923
Filename :
4292170
Link To Document :
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