DocumentCode
1101012
Title
Design consideration of p-well structure for solid-state image sensors
Author
Teranishi, Nobukazu ; Kohno, Akiyposhi ; Ishihara, Yasuo
Author_Institution
NEC Corporation, Kawasaki, Japan
Volume
32
Issue
8
fYear
1985
fDate
8/1/1985 12:00:00 AM
Firstpage
1462
Lastpage
1468
Abstract
The p-well structure has been widely used in solid-state image sensors to suppress blooming and smear. This structure, however, suffers from saturation-level shading, flicker, and saturation-level fixed pattern noise. This work clarifies that the p-well potential sway, due to transfer pulse feeding, brings about the shading and the flicker, and the impurity fluctuation in the silicon substrate causes the saturation-level fixed pattern noise. To eliminate the problems, new structures and new driving modes are proposed. As a result, the shading is reduced to a practically negligible level, and the flicker and the fixed pattern noise are completely suppressed.
Keywords
Charge coupled devices; Charge-coupled image sensors; Clocks; Detectors; Dynamic range; Fluctuations; Image sensors; Photodiodes; Registers; Solid state circuits;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22146
Filename
1484892
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