• DocumentCode
    1101012
  • Title

    Design consideration of p-well structure for solid-state image sensors

  • Author

    Teranishi, Nobukazu ; Kohno, Akiyposhi ; Ishihara, Yasuo

  • Author_Institution
    NEC Corporation, Kawasaki, Japan
  • Volume
    32
  • Issue
    8
  • fYear
    1985
  • fDate
    8/1/1985 12:00:00 AM
  • Firstpage
    1462
  • Lastpage
    1468
  • Abstract
    The p-well structure has been widely used in solid-state image sensors to suppress blooming and smear. This structure, however, suffers from saturation-level shading, flicker, and saturation-level fixed pattern noise. This work clarifies that the p-well potential sway, due to transfer pulse feeding, brings about the shading and the flicker, and the impurity fluctuation in the silicon substrate causes the saturation-level fixed pattern noise. To eliminate the problems, new structures and new driving modes are proposed. As a result, the shading is reduced to a practically negligible level, and the flicker and the fixed pattern noise are completely suppressed.
  • Keywords
    Charge coupled devices; Charge-coupled image sensors; Clocks; Detectors; Dynamic range; Fluctuations; Image sensors; Photodiodes; Registers; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22146
  • Filename
    1484892