Title :
Gain nonlinearities due to carrier density dependent dispersion in semiconductor lasers
Author :
Hjelme, Dag Roar ; Mickelson, Alan Rolf
Author_Institution :
Optoelectron. Comput. Syst. Center, Colorado Univ., Boulder, CO, USA
fDate :
7/1/1989 12:00:00 AM
Abstract :
Semiconductor-field interaction is analyzed by using a semiclassical density-matrix approach. Using an exact elimination procedure for the dipole moments, corrections to the standard rate equation are obtained and shown to result in gain nonlinearities. The gain nonlinearities are due to carrier-density-dependent dispersion at the lasing frequency. Using available measured data of the frequency dependence of the carrier-induced refractive index change, gain compression coefficients in agreement with experimental values are obtained
Keywords :
carrier density; laser theory; optical dispersion; optical saturation; refractive index; semiconductor junction lasers; carrier density dependent dispersion; carrier-induced refractive index change; density-matrix approach; dipole moments; exact elimination procedure; frequency dependence; gain compression coefficients; gain nonlinearities; lasing frequency; semiconductor lasers; semiconductor-field interaction; standard rate equation; Bandwidth; Charge carrier density; Chirp modulation; Damping; Gain measurement; Laser modes; Laser theory; Nonlinear equations; Optical refraction; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
