Gain nonlinearities due to carrier density dependent dispersion in semiconductor lasers

Author

Hjelme, Dag Roar ; Mickelson, Alan Rolf

Author_Institution

Optoelectron. Comput. Syst. Center, Colorado Univ., Boulder, CO, USA

Volume

25

Issue

7

fYear

1989

fDate

7/1/1989 12:00:00 AM

Firstpage

1625

Lastpage

1631

Abstract

Semiconductor-field interaction is analyzed by using a semiclassical density-matrix approach. Using an exact elimination procedure for the dipole moments, corrections to the standard rate equation are obtained and shown to result in gain nonlinearities. The gain nonlinearities are due to carrier-density-dependent dispersion at the lasing frequency. Using available measured data of the frequency dependence of the carrier-induced refractive index change, gain compression coefficients in agreement with experimental values are obtained

Keywords

carrier density; laser theory; optical dispersion; optical saturation; refractive index; semiconductor junction lasers; carrier density dependent dispersion; carrier-induced refractive index change; density-matrix approach; dipole moments; exact elimination procedure; frequency dependence; gain compression coefficients; gain nonlinearities; lasing frequency; semiconductor lasers; semiconductor-field interaction; standard rate equation; Bandwidth; Charge carrier density; Chirp modulation; Damping; Gain measurement; Laser modes; Laser theory; Nonlinear equations; Optical refraction; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.29304

Filename

29304