DocumentCode
1101321
Title
Nonlinear characterization of modal gain and effective index saturation in channeled-substrate-planar double-heterojunction lasers
Author
Butler, Jerome K. ; Evans, Gary A. ; Carlson, Nils W.
Author_Institution
Sch. of Eng. & Appl. Sci., Southern Methodist Univ., Dallas, TX, USA
Volume
25
Issue
7
fYear
1989
fDate
7/1/1989 12:00:00 AM
Firstpage
1646
Lastpage
1652
Abstract
The nonlinear modal gain and effective index in AlGaAs/GaAs channel-substrate-planar double-heterojunction (CSP-DH) lasers are calculated as a function of the drive current and intracavity power. These functions are first computed using a self-consistent procedure that ties together the optical fields and the carrier distribution in the active layer. The functions are then suitably fit to a new empirical analytic expression that is useful for modeling the laser as a single device or as multiple lasers that are coherently locked. The specific analytic expressions are simple algebraic formulas that have six parameters that can be calculated using regression techniques. These parameters are computed for the CSP-DH laser as a function of the stripe contact width
Keywords
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; optical saturation; refractive index; semiconductor junction lasers; AlGaAs-GaAs; CSP-DH lasers; active layer; carrier distribution; channeled-substrate-planar double-heterojunction lasers; coherently locked; drive current; effective index saturation; intracavity power; multiple lasers; nonlinear modal gain; optical fields; regression techniques; stripe contact width; DH-HEMTs; Equations; Laser mode locking; Laser modes; Laser theory; Optical propagation; Optical saturation; Power lasers; Semiconductor lasers; Stimulated emission;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.29306
Filename
29306
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