DocumentCode :
1101376
Title :
Field-induced guide/antiguide modulators on InGaAsP/InP
Author :
Lee, Su-Lin ; Mahon, C.J. ; Dagli, Nadir ; DenBaars, Steven P. ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
Volume :
30
Issue :
12
fYear :
1994
fDate :
6/9/1994 12:00:00 AM
Firstpage :
954
Lastpage :
956
Abstract :
The authors demonstrate the first field-induced guide/antiguide modulators (FIGAMs) on InP-based materials. Good electrical isolation between electrodes was obtained by implanting through the quaternary waveguide and 15 dB on/off ratio has been achieved. Bit error rate measurements for system applications are also reported
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; optical modulation; optical waveguides; FIGAMs; InGaAsP-InP; InGaAsP/InP; InP-based materials; antiguide modulators; bit error rate measurements; electrical isolation; field-induced; guide modulators; on/off ratio; quaternary waveguide; system applications;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940643
Filename :
293064
Link To Document :
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