• DocumentCode
    1101416
  • Title

    1.5 W visible, near-diffraction-limited, tapered-stripe optical amplifier

  • Author

    Mehuys, D. ; Geels, R.S. ; Plano, W.E. ; Welch, D.F.

  • Author_Institution
    SDL Inc., San Jose, CA, USA
  • Volume
    30
  • Issue
    12
  • fYear
    1994
  • fDate
    6/9/1994 12:00:00 AM
  • Firstpage
    961
  • Lastpage
    962
  • Abstract
    A discrete tapered-stripe amplifier injected with a 670 nm wavelength singlemode visible laser emitted up to 1.58 W in a near-diffraction-limited radiation pattern under pulsed conditions
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; laser modes; light diffraction; semiconductor lasers; 1.58 W; 670 nm; GaInP; GaInP quantum well laser active layer; near-diffraction-limited radiation pattern; pulsed conditions; singlemode visible laser; visible near-diffraction-limited tapered-stripe optical amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940672
  • Filename
    293068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1101416