Title :
1.5 W visible, near-diffraction-limited, tapered-stripe optical amplifier
Author :
Mehuys, D. ; Geels, R.S. ; Plano, W.E. ; Welch, D.F.
Author_Institution :
SDL Inc., San Jose, CA, USA
fDate :
6/9/1994 12:00:00 AM
Abstract :
A discrete tapered-stripe amplifier injected with a 670 nm wavelength singlemode visible laser emitted up to 1.58 W in a near-diffraction-limited radiation pattern under pulsed conditions
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser modes; light diffraction; semiconductor lasers; 1.58 W; 670 nm; GaInP; GaInP quantum well laser active layer; near-diffraction-limited radiation pattern; pulsed conditions; singlemode visible laser; visible near-diffraction-limited tapered-stripe optical amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940672
