• DocumentCode
    1101427
  • Title

    On the theoretical basis of the surface photovoltage technique

  • Author

    Chiang, Ching lang ; Wagner, Sigurd

  • Author_Institution
    Intel Corporation, Santa Clara, CA
  • Volume
    32
  • Issue
    9
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    1722
  • Lastpage
    1726
  • Abstract
    A complete theory for the constant-magnitude steady-state surface photovoltage (SPV) technique is developed. Emphasis is placed on the determination of the minority-carrier diffusion length. The theory is derived from the basic transport mechanisms in semiconductors with minimal assumptions. The recombination of electron-hole pairs in the surface depletion region is incorporated explicitly.
  • Keywords
    Absorption; Conductors; Electrons; Helium; Lighting; Photonic band gap; Radiative recombination; Spontaneous emission; Steady-state; Surface treatment;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22186
  • Filename
    1484932
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1101427