• DocumentCode
    1101448
  • Title

    High-Speed Low-Noise p-i-n InGaAs Photoreceiver at 2- \\mu m Wavelength

  • Author

    Joshi, Abhay ; Becker, Don

  • Author_Institution
    Discovery Semicond., Ewing
  • Volume
    20
  • Issue
    8
  • fYear
    2008
  • fDate
    4/15/2008 12:00:00 AM
  • Firstpage
    551
  • Lastpage
    553
  • Abstract
    A p-i-n InGaAs photoreceiver with a 3-dB bandwidth of 6 GHz at 2-mum wavelength is presented. The photodiode, having a responsivity of 1.34 A/W and a dark current of 400 nA, is coupled to a transimpedance amplifier to provide a conversion gain of 670 V/W at room temperature.
  • Keywords
    III-V semiconductors; indium compounds; microwave amplifiers; microwave receivers; optical receivers; p-i-n photodiodes; photoconductivity; photoemission; wide band gap semiconductors; InGaAs; bandwidth 6 GHz; conversion gain; current 400 nA; dark current; p-i-n InGaAs photoreceiver; p-i-n photodiodes; transimpedance amplifier; wavelength 2 mum; Bandwidth; Dark current; High speed optical techniques; Indium gallium arsenide; Optical mixing; Optical receivers; Optical sensors; PIN photodiodes; Semiconductor device noise; Temperature; Optical receivers; photodiodes;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2008.918856
  • Filename
    4472047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1101448