• DocumentCode
    1101459
  • Title

    Turn-on response of the triangular barrier switch

  • Author

    Rees, Paul K. ; Barnard, Joseph A.

  • Author_Institution
    University College of Swansea, Swansea, Wales
  • Volume
    32
  • Issue
    9
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    1741
  • Lastpage
    1744
  • Abstract
    The switch-on time of a GaAs n-type triangular barrier switch (TBS) has been measured from the 10 to 90 percent points to be 300 ps. The real part of the impedance of the 75-µm-diameter TBS changed from 6.7 kΩ in the OFF state to 9.75 Ω (including device contact resistance) in the ON state. After the switching threshold level was exceeded, the current density through the switch increased exponentially with a time constant of 112 ps. The minority-carrier effective base transit time of 86 ps accounted for most of the TBS switch-on time constant.
  • Keywords
    Charge carrier processes; Electrical resistance measurement; Electron emission; Gallium arsenide; Gold; Impedance; Laboratories; P-n junctions; Switches; Time measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22189
  • Filename
    1484935