High-Efficiency 808-nm InGaAlAs–AlGaAs Double-Quantum-Well Semiconductor Lasers With Asymmetric Waveguide Structures

Author

Li, Lin ; Liu, Guojun ; Li, Zhanguo ; Li, Mei ; Li, Hui ; Wang, Xiaohua ; Wan, Chunming

Author_Institution

Changchun Univ. of Sci. & Technol., Changchun

Volume

20

Issue

8

fYear

2008

fDate

4/15/2008 12:00:00 AM

Firstpage

566

Lastpage

568

Abstract

The InGaAlAs-AlGaAs double-quantum-well semiconductor lasers grown by molecular beam epitaxy show high quantum efficiency and high power conversion efficiency at continuous-wave power output using asymmetric waveguide structures. The threshold current density and slope efficiency of the device are 180 A/cm² and 1.4 W/A, respectively. The internal loss and the internal quantum efficiency are 1.1 cm^-1 and 97%, respectively. The 75% maximum power conversion efficiency is achieved in 100-mum stripe widths 808-nm-emitting laser diodes with 1000-mum cavity length.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; molecular beam epitaxial growth; optical waveguides; semiconductor lasers; High-efficiency double-quantum-well semiconductor lasers; InGaAlAs-AlGaAs; asymmetric waveguide structures; continuous-wave power output; laser diodes; molecular beam epitaxy; slope efficiency; threshold current density; wavelength 808 nm; Diode lasers; Molecular beam epitaxial growth; Optical losses; Optical waveguides; Power conversion; Power lasers; Semiconductor lasers; Semiconductor waveguides; Stimulated emission; Waveguide lasers; Asymmetric waveguide; molecular beam epitaxy; quantum efficiency; semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.918857

Filename

4472048