Title :
High-Efficiency 808-nm InGaAlAs–AlGaAs Double-Quantum-Well Semiconductor Lasers With Asymmetric Waveguide Structures
Author :
Li, Lin ; Liu, Guojun ; Li, Zhanguo ; Li, Mei ; Li, Hui ; Wang, Xiaohua ; Wan, Chunming
Author_Institution :
Changchun Univ. of Sci. & Technol., Changchun
fDate :
4/15/2008 12:00:00 AM
Abstract :
The InGaAlAs-AlGaAs double-quantum-well semiconductor lasers grown by molecular beam epitaxy show high quantum efficiency and high power conversion efficiency at continuous-wave power output using asymmetric waveguide structures. The threshold current density and slope efficiency of the device are 180 A/cm2 and 1.4 W/A, respectively. The internal loss and the internal quantum efficiency are 1.1 cm-1 and 97%, respectively. The 75% maximum power conversion efficiency is achieved in 100-mum stripe widths 808-nm-emitting laser diodes with 1000-mum cavity length.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; molecular beam epitaxial growth; optical waveguides; semiconductor lasers; High-efficiency double-quantum-well semiconductor lasers; InGaAlAs-AlGaAs; asymmetric waveguide structures; continuous-wave power output; laser diodes; molecular beam epitaxy; slope efficiency; threshold current density; wavelength 808 nm; Diode lasers; Molecular beam epitaxial growth; Optical losses; Optical waveguides; Power conversion; Power lasers; Semiconductor lasers; Semiconductor waveguides; Stimulated emission; Waveguide lasers; Asymmetric waveguide; molecular beam epitaxy; quantum efficiency; semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.918857
