DocumentCode
1101532
Title
5.6-W Broad-Area Lasers With a Vertical Far-Field Angle of 31 
Emitting at 670 nm
Author
Sumpf, Bernd ; Zorn, Martin ; Maiwald, Martin ; Staske, Ralf ; Fricke, Jörg ; Ressel, Peter ; Erbert, Götz ; Weyers, Markus ; Tränkle, Günther
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenz-Tech., Berlin
Volume
20
Issue
8
fYear
2008
fDate
4/15/2008 12:00:00 AM
Firstpage
575
Lastpage
577
Abstract
Highly efficient 670-nm high-power broad-area laser diodes with a single InGaP quantum-well embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers are presented. The developed vertical layer structure leads to a vertical far-field angle of 31deg. At 15degC, 100 mu-m-wide broad-area lasers reach an output power of 5.6 W limited by thermal rollover. The conversion efficiency was 41% at 1.5 W. A 7600-h reliable operation at 1.5 W and a mean time to failure of about 37550 h will be reported.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; AlGaAs; AlGaInP; AlInP; InGaP; broad-area laser; continuous-wave lasers; efficiency 41 percent; laser diode; laser reliability; power 1.5 W; power 5.6 W; quantum well; red lasers; semiconductor lasers; thermal rollover; time 7600 h; vertical layer structure; wavelength 670 nm; Diode lasers; Doping; Laser excitation; Light sources; Power generation; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Waveguide lasers; Continuous-wave lasers; laser reliability; red lasers; semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2008.918868
Filename
4472054
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