DocumentCode :
1101543
Title :
Dependence of Linewidth Enhancement Factor on Duty Cycle in InGaAs–GaAs Quantum-Dot Lasers
Author :
Tan, Hua ; Mi, Zetian ; Bhattacharya, Pallab ; Klotzkin, David
Author_Institution :
Univ. of Cincinnati, Cincinnati
Volume :
20
Issue :
8
fYear :
2008
fDate :
4/15/2008 12:00:00 AM
Firstpage :
593
Lastpage :
595
Abstract :
The linewidth enhancement factor (alpha-factor) of InGaAs-GaAs quantum-dot (QD) lasers is studied as a function of the current pulse duty cycle. In this letter, we demonstrate the impact that current pulse duty cycle has on measured -factor in QD lasers due to increased thermal effects. Below threshold, while comparable quantum-well lasers blue-shift under all conditions, the QD lasers demonstrate an unusual sensitivity of chirp to duty cycle of the current, with a blue-shift at low duty cycles, and a red-shift at high duty cycles and dc current, which may lead to negative -factor. The assumption of Gaussian gain distribution and linear gain shift with temperature is used to analyze the -factor at different duty cycle currents. The result agrees well with the positive, zero, and negative alpha-factors reported for QD lasers. The effect of duty cycle is quite significant and can shift the alpha-factor substantially going from pulse to dc. This is due to the low thermal conductivity of QD regions and increased thermal effects in those devices.
Keywords :
Gaussian distribution; III-V semiconductors; chirp modulation; gallium arsenide; indium compounds; quantum dot lasers; red shift; spectral line breadth; thermal conductivity; Gaussian gain distribution; InGaAs-GaAs; blue-shift; chirp sensitivity; current pulse duty cycle; gain shift; linewidth enhancement factor; quantum-dot lasers; quantum-well lasers; red-shift; thermal conductivity; Chirp; Current measurement; Gain; Optical pulses; Pulse measurements; Quantum dot lasers; Quantum dots; Quantum well lasers; Temperature distribution; Thermal conductivity; In(Ga)As; linewidth enhancement factor; quantum-dot (QD) lasers; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.918234
Filename :
4472055
Link To Document :
بازگشت