DocumentCode :
1101599
Title :
1/f noise in n+-p diodes
Author :
Van Der Ziel, Aldert ; Handel, Peter H.
Author_Institution :
University of Minnesota, Minneapolis, MN
Volume :
32
Issue :
9
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
1802
Lastpage :
1805
Abstract :
A simple quantum expression of the 1/f noise spectrum 
of n+-p diodes operating in the generation-recombination (g-r) mode is obtained that is valid for all bias voltages. It turns out to be quite small. A new quantum 1/f noise effect in diodes operating in the diffusion mode is evaluated; it mimics g-r 1/f noise, but is much larger than it. It should predominate if Umklapp noise is not observable (this has been found to be the case for diffusion in the base region of p+-n-p or n+-p-n BJT\´s).
of n+-p diodes operating in the generation-recombination (g-r) mode is obtained that is valid for all bias voltages. It turns out to be quite small. A new quantum 1/f noise effect in diodes operating in the diffusion mode is evaluated; it mimics g-r 1/f noise, but is much larger than it. It should predominate if Umklapp noise is not observable (this has been found to be the case for diffusion in the base region of p+-n-p or n+-p-n BJT\´s).Keywords :
Acceleration; Charge carrier processes; Density estimation robust algorithm; Diodes; Electron emission; Electron traps; Fusion power generation; Noise generators; Radiative recombination; Spontaneous emission;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22201
Filename :
1484947
Link To Document :
