Title :
Selfaligned integrated silica on silicon waveguide-photodiode interface
Author :
Crookes, C.G. ; Croston, I.R. ; Pescod, C.R.
Author_Institution :
GEC-Marconi Res. Centre, Great Baddow
fDate :
6/9/1994 12:00:00 AM
Abstract :
The authors report the demonstration of planar, doped silica waveguides integrated with rear-illuminated InGaAs/InP photodiodes for use in compact, singlemode, optoelectronic hybrid modules. The photodiodes are assembled with the waveguides using a selfaligned technique giving a mean excess loss of 0.9 dB at 1.3 μm and a 3 dB bandwidth of 1.5 GHz
Keywords :
integrated optoelectronics; optical waveguides; photodiodes; silicon; silicon compounds; 0.9 dB; 1.3 micron; 1.5 GHz; InGaAs-InP; SiO2 on Si structure; SiO2-Si; integrated waveguide-photodiode interface; planar doped silica waveguides; rear-illuminated photodiodes; selfaligned technique; singlemode optoelectronic hybrid modules;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940662
