Title :
Fabrication of SiC films on Si(100) using a C60 molecular source
Author :
Chen, D. ; Workman, R. ; Sarid, D.
Author_Institution :
Opt. Sci. Center, Arizona Univ., Tucson, AZ
fDate :
6/9/1994 12:00:00 AM
Abstract :
70 nm thick SiC films have been fabricated on Si(100) wafers under ultrahigh vacuum conditions, by depositing C60 molecules on substrates held at 900°C. The composition and morphology of the films have been measured using infra-red spectroscopy and atomic force microscopy
Keywords :
atomic force microscopy; infrared spectra of inorganic solids; semiconductor materials; semiconductor thin films; silicon compounds; vacuum deposited coatings; vacuum deposition; 70 nm; 900 C; AFM; C60 molecular source; IR spectroscopy; Si; Si substrate; Si(100) wafers; SiC; SiC film; SiC-Si; atomic force microscopy; film composition; film morphology; infra-red spectroscopy; ultrahigh vacuum conditions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940683
