• DocumentCode
    1101757
  • Title

    Fabrication of SiC films on Si(100) using a C60 molecular source

  • Author

    Chen, D. ; Workman, R. ; Sarid, D.

  • Author_Institution
    Opt. Sci. Center, Arizona Univ., Tucson, AZ
  • Volume
    30
  • Issue
    12
  • fYear
    1994
  • fDate
    6/9/1994 12:00:00 AM
  • Firstpage
    1007
  • Lastpage
    1008
  • Abstract
    70 nm thick SiC films have been fabricated on Si(100) wafers under ultrahigh vacuum conditions, by depositing C60 molecules on substrates held at 900°C. The composition and morphology of the films have been measured using infra-red spectroscopy and atomic force microscopy
  • Keywords
    atomic force microscopy; infrared spectra of inorganic solids; semiconductor materials; semiconductor thin films; silicon compounds; vacuum deposited coatings; vacuum deposition; 70 nm; 900 C; AFM; C60 molecular source; IR spectroscopy; Si; Si substrate; Si(100) wafers; SiC; SiC film; SiC-Si; atomic force microscopy; film composition; film morphology; infra-red spectroscopy; ultrahigh vacuum conditions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940683
  • Filename
    293098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1101757