• DocumentCode
    1101770
  • Title

    The modeling of ion implantation in a three-layer structure using the method of dose matching

  • Author

    Amaratunga, G.A.J. ; Sabine, K. ; Evans, A.G.R.

  • Author_Institution
    University of Southampton, U.K.
  • Volume
    32
  • Issue
    9
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    1889
  • Lastpage
    1890
  • Abstract
    The method of modeling ion implantation in a multilayer target using moments of a statistical distribution and numerical integration for dose calculation in each target layer is applied to the modelling of As+in poly-Si/SiO2/Si. Good agreement with experiment is obtained.
  • Keywords
    Boltzmann equation; Fabrication; Implants; Impurities; Ion implantation; MOS devices; Nonhomogeneous media; Solid modeling; Statistical distributions; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22215
  • Filename
    1484961
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1101770