Title :
The modeling of ion implantation in a three-layer structure using the method of dose matching
Author :
Amaratunga, G.A.J. ; Sabine, K. ; Evans, A.G.R.
Author_Institution :
University of Southampton, U.K.
fDate :
9/1/1985 12:00:00 AM
Abstract :
The method of modeling ion implantation in a multilayer target using moments of a statistical distribution and numerical integration for dose calculation in each target layer is applied to the modelling of As+in poly-Si/SiO2/Si. Good agreement with experiment is obtained.
Keywords :
Boltzmann equation; Fabrication; Implants; Impurities; Ion implantation; MOS devices; Nonhomogeneous media; Solid modeling; Statistical distributions; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22215
