Title :
Analytical model for predicting threshold voltage in submicrometer-channel MOSFET´s
Author :
Tang, Ting Wei ; Zhang, Qian Ling ; Navon, David H.
Author_Institution :
University of Massachusetts, Amherst, MA
fDate :
9/1/1985 12:00:00 AM
Abstract :
A quasi-two-dimensional analytical closed-form determination of the threshold voltage has been derived for submicrometer-channel-length MOSFET´s. The invalid assumption of uniform depletion-layer width made in a prior similar computation has been corrected. A comparison between the results of previous extensive two-dimensional numerical analyses and the present analysis proves that the present model is quite accurate.
Keywords :
Amorphous materials; Analytical models; Annealing; Capacitance-voltage characteristics; Electric variables measurement; Gaussian distribution; Heat treatment; Implants; Solid modeling; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1985.22216
