DocumentCode
1101793
Title
Turn-off length and lateral field in the p-base layer of a GTO thyristor
Author
Asai, S. ; Sawaki, N. ; Akasaki, I. ; Iwata, K.
Author_Institution
Nagoya University, Nagoya, Japan
Volume
32
Issue
9
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
1894
Lastpage
1896
Abstract
The turn off of a GTO is studied by measuring the infrared radiation. It is shown that the turn-off region length is determined by the balance of the diffusion current from the ON region and the drift current against it, and the lateral field in the p-base has a role in determining the turn-off of a GTO.
Keywords
Anodes; Cathodes; Charge carrier density; Current measurement; Density measurement; Diodes; Electrodes; Image converters; Steady-state; Thyristors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22217
Filename
1484963
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