DocumentCode :
1101793
Title :
Turn-off length and lateral field in the p-base layer of a GTO thyristor
Author :
Asai, S. ; Sawaki, N. ; Akasaki, I. ; Iwata, K.
Author_Institution :
Nagoya University, Nagoya, Japan
Volume :
32
Issue :
9
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
1894
Lastpage :
1896
Abstract :
The turn off of a GTO is studied by measuring the infrared radiation. It is shown that the turn-off region length is determined by the balance of the diffusion current from the ON region and the drift current against it, and the lateral field in the p-base has a role in determining the turn-off of a GTO.
Keywords :
Anodes; Cathodes; Charge carrier density; Current measurement; Density measurement; Diodes; Electrodes; Image converters; Steady-state; Thyristors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1985.22217
Filename :
1484963
Link To Document :
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