Title :
New method of modelling a multipeak resonant tunnelling diode
Author :
Huang, C.Y. ; Morris, James E. ; Su, Y.K. ; Kuo, T.H.
Author_Institution :
Dept. of Electr. Eng., State Univ. of New York, Binghamton, NY
fDate :
6/9/1994 12:00:00 AM
Abstract :
The authors report an improved approach to modelling the I-V characteristics of a multipeak resonant tunnelling diode (RTD). The merit of this new RTD model is demonstrated
Keywords :
equivalent circuits; resonant tunnelling devices; semiconductor device models; tunnel diodes; I-V characteristics; modelling; multipeak RTD; resonant tunnelling diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940636
