Monte Carlo calculation of one- and two-dimensional particle and damage distributions for ion-implanted dopants in silicon

The two-dimensional distributions of particles, primary damage, and electronic and nuclear energy loss were calculated for implantation of a line source into silicon targets by using the TRIM Monte Carlo code. In addition, the Kinchin-Pease equation was used to calculate approximate two-dimensional distributions of the Frenkel pairs (vacancy-interstitial) created by the primary displacement damage of the target atoms. These distributions allowed for the calculation of the one-dimensional distributions of these quantities for implantation into unmasked targets. The two-dimensional particle and approximate Frenkel pairs distributions for implantation past a mask edge were constructed by means of superposition. The results are important for understanding the mass, energy, and dose dependence of implantation and the associated displacement damage.