DocumentCode
1101911
Title
Design and experimental characteristics of strained In0.52 Al0.48As/InxGa1-xAs (x>0.53) HEMTs
Author
Ng, Geok-Ing ; Pavlidis, Dimitris ; Jaffe, Mark ; Singh, Jasprit ; Chau, Hin-Fai
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
36
Issue
10
fYear
1989
fDate
10/1/1989 12:00:00 AM
Firstpage
2249
Lastpage
2259
Abstract
Strained In0.52Al0.48 As/InxGa 1-xAs (x >0.53) HEMTs (high electron mobility transistors) are studied theoretically and experimentally. A device design procedure is reported that is based on band structure and charge control self-consistent calculations. It predicts the sheet carrier density and electron confinement as a function of doping and thickness of layers. The DC performance at 300 K is presented. Wafer statistics demonstrate improvement of device characteristics with excess indium in the channel (g¯m, intr=500 and 700 mS/mm for x=0.60 and 0.65). Microwave characterization shows the f T improvement (f T=40 and 45 GHz for x =0.60 and 0.65, respectively) and the R ds limitations of the 1-μm-long-gate HEMTs
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 1 micron; 300 K; 40 GHz; 45 GHz; 500 mS; 700 mS; DC performance; In0.52Al0.48As-InxGa1-x As; band structure; charge control self-consistent calculations; cutoff frequency; device design procedure; electron confinement; microwave characterisation; sheet carrier density; strained HEMTs; transconductance; wafer statistics; Carrier confinement; Charge carrier density; Cutoff frequency; Effective mass; Electron mobility; Gallium arsenide; Indium compounds; Indium gallium arsenide; Microelectronics; Solid state circuits;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.40907
Filename
40907
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