• DocumentCode
    1101913
  • Title

    Simulation of critical IC-fabrication steps

  • Author

    Pichler, Peter ; Jüngling, Werner ; Selberherr, Siegfried ; Guerrero, Edgar ; Pötzl, Hans W.

  • Author_Institution
    Institut für Allegemeine Elektrotechnik und Elektronik, Vienna, Austria
  • Volume
    32
  • Issue
    10
  • fYear
    1985
  • fDate
    10/1/1985 12:00:00 AM
  • Firstpage
    1940
  • Lastpage
    1953
  • Abstract
    Due to the advances in device miniaturization it is often necessary to get a better understanding of the physical fabrication processes by applying advanced physical models. Since existing process modeling programs can handle only specific physical quantities, we have developed general purpose solvers for one and two space dimensions which are able to treat an arbitrary number of coupled partial differential equations for physical quantities. In the paper we will show the general formulation of the equations which can be solved. We deal with the user-interface of the programs and the numerical problems one has to face. To demonstrate the capabilities of the programs we will show typical applications.
  • Keywords
    Design optimization; Differential equations; Doping profiles; Electrical capacitance tomography; Fabrication; Finite wordlength effects; Interpolation; P-n junctions; Partial differential equations; Semiconductor process modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1985.22226
  • Filename
    1484972