DocumentCode
1101913
Title
Simulation of critical IC-fabrication steps
Author
Pichler, Peter ; Jüngling, Werner ; Selberherr, Siegfried ; Guerrero, Edgar ; Pötzl, Hans W.
Author_Institution
Institut für Allegemeine Elektrotechnik und Elektronik, Vienna, Austria
Volume
32
Issue
10
fYear
1985
fDate
10/1/1985 12:00:00 AM
Firstpage
1940
Lastpage
1953
Abstract
Due to the advances in device miniaturization it is often necessary to get a better understanding of the physical fabrication processes by applying advanced physical models. Since existing process modeling programs can handle only specific physical quantities, we have developed general purpose solvers for one and two space dimensions which are able to treat an arbitrary number of coupled partial differential equations for physical quantities. In the paper we will show the general formulation of the equations which can be solved. We deal with the user-interface of the programs and the numerical problems one has to face. To demonstrate the capabilities of the programs we will show typical applications.
Keywords
Design optimization; Differential equations; Doping profiles; Electrical capacitance tomography; Fabrication; Finite wordlength effects; Interpolation; P-n junctions; Partial differential equations; Semiconductor process modeling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1985.22226
Filename
1484972
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