Title :
A wideband low-noise variable-gain BiCMOS transimpedance amplifier
Author :
Meyer, Robert G. ; Mack, William D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
A new monolithic variable gain transimpedance amplifier is described. The circuit is realized in BiCMOS technology and has measured gain of 98 kΩ, bandwidth of 128 MHz, input noise current spectral density of 1.17 pA/√(Hz) and input signal-current handling capability of 3 mA
Keywords :
BiCMOS integrated circuits; amplifiers; electric impedance; 128 MHz; 3 mA; BiCMOS technology; input noise current spectral density; input signal-current handling capability; measured gain; monolithic variable gain transimpedance amplifier; wideband low-noise variable-gain BiCMOS transimpedance amplifier; Bandwidth; BiCMOS integrated circuits; Broadband amplifiers; Circuit noise; Circuit topology; Low-noise amplifiers; Noise level; Pulse amplifiers; Resistors; Semiconductor device noise;
Journal_Title :
Solid-State Circuits, IEEE Journal of
