DocumentCode
1101930
Title
A wideband low-noise variable-gain BiCMOS transimpedance amplifier
Author
Meyer, Robert G. ; Mack, William D.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
29
Issue
6
fYear
1994
fDate
6/1/1994 12:00:00 AM
Firstpage
701
Lastpage
706
Abstract
A new monolithic variable gain transimpedance amplifier is described. The circuit is realized in BiCMOS technology and has measured gain of 98 kΩ, bandwidth of 128 MHz, input noise current spectral density of 1.17 pA/√(Hz) and input signal-current handling capability of 3 mA
Keywords
BiCMOS integrated circuits; amplifiers; electric impedance; 128 MHz; 3 mA; BiCMOS technology; input noise current spectral density; input signal-current handling capability; measured gain; monolithic variable gain transimpedance amplifier; wideband low-noise variable-gain BiCMOS transimpedance amplifier; Bandwidth; BiCMOS integrated circuits; Broadband amplifiers; Circuit noise; Circuit topology; Low-noise amplifiers; Noise level; Pulse amplifiers; Resistors; Semiconductor device noise;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.293116
Filename
293116
Link To Document