• DocumentCode
    1101950
  • Title

    Super-low gain bandwidth and small area amplifier

  • Author

    Wulleman, J.

  • Author_Institution
    Free Univ. of Brussels, Belgium
  • Volume
    32
  • Issue
    15
  • fYear
    1996
  • fDate
    7/18/1996 12:00:00 AM
  • Firstpage
    1366
  • Lastpage
    1367
  • Abstract
    A low-powered super-low gain bandwidth (SL-GBW) amplifier with a small area is discussed. The circuit has a transition Frequency fT of 38 kHz (including gain stage, A), a power consumption of 150 nW, a phase margin PM≃70°, a total area of 300×36 μm 2 and a minimum current per transistor of 7 nA which is far above the leakage current after irradiation. The circuit was implemented in the radiation hard SOI BiCMOS technology of DMILL
  • Keywords
    BiCMOS analogue integrated circuits; SPICE; circuit analysis computing; compensation; network topology; pulse amplifiers; radiation hardening (electronics); silicon-on-insulator; 150 nW; 38 kHz; 7 nA; DMILL; compensation amplifier; minimum current; phase margin; power consumption; radiation hard SOI BiCMOS technology; super-low gain bandwidth amplifier; transition frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960932
  • Filename
    511122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1101950